G3F40MT12J
1200 V / 59 A Navitas GeneSiC SiC MOSFET, 40 mOhm, TO-263-7, AEC-Q101, for medium-power chargers and solar.
The G3F40MT12J is a 1200 V / 59 A Navitas GeneSiC silicon carbide MOSFET with a typical on-resistance of 40 milliohm, in the surface-mount TO-263-7 package. It trades some on-resistance for a lower cost than the 25 milliohm part while keeping the wide-bandgap benefits of clean, fast switching and a 175 C maximum junction temperature. The GeneSiC Gen3F technology delivers the most stable on-resistance over temperature, so the thermal design is predictable, and the balanced capacitances, low gate-drain charge and robust body diode with low reverse-recovery charge ease the gate-drive and freewheeling design. Because SiC has no tail current, the device can switch at high frequency with lower loss than silicon, which shrinks the magnetics and the cooling in medium-power on-board chargers, solar inverters, energy storage and power supplies. The device is AEC-Q101 qualified. Every device is factory-traceable and ships with import declaration, certificate of origin and RoHS documentation. Designers should confirm the gate drive, loop inductance and hot on-resistance. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.
FAE Professional Review
The G3F40MT12J is the value option in the Navitas G3F line: a low on-resistance at 1200 V for a price that makes SiC practical in mainstream designs. It suits medium-power chargers and solar stages where efficiency still matters but cost is tight. Keep the layout disciplined and it is straightforward to use.
| Parameter | Value |
|---|---|
| VDSS (V) | 1200 V |
| ID (A) | 59 A |
| RDS(on) typ (mOhm) | 40 |
| Package | TO-263-7 |
| Technology | Gen3F |
Application Circuits
Medium-power chargers
Reference circuits and application schematics for Medium-power chargers are available from our FAE team.
Solar inverters
Reference circuits and application schematics for Solar inverters are available from our FAE team.
Power supplies
Reference circuits and application schematics for Power supplies are available from our FAE team.
Need a reference schematic or design review? Our FAE engineers can share verified circuits and layout guidance for this part.
Related Documents
Alternative Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| G3F25MT12J | TO-263-7 | Lower on-resistance option for higher efficiency | View |
Complementary Part Numbers
| Model | Package | Note | Action |
|---|---|---|---|
| GD30MPS12H | TO-247-2 | SiC Schottky diode for the freewheeling path | View |
| G3F25MT12J | TO-263-7 | Lower on-resistance MOSFET for the main switch | View |
Recommended Complementary Products
Frequently Asked Questions
When should I choose the 40 milliohm part?
Choose it when a 1200 V SiC MOSFET is the right technology but the current is moderate and cost matters, such as a medium-power on-board charger, a solar stage or a power supply. The 40 milliohm on-resistance at 59 A suits these classes with margin.
For maximum efficiency, step up to the G3F25MT12J.
Can I use a standard gate driver?
The G3F family works with a standard +15 V / -5 V gate drive, so it is compatible with common gate drivers. The TO-263-7 package helps keep the gate loop short, but you should still choose the gate resistor for your EMI target.
Our FAE team can review your gate-drive design.
Is the part genuine and documented?
BeiLuo supplies factory-traceable G3F40MT12J devices through Navitas GeneSiC's authorized channel, with import declaration, certificate of origin and RoHS files on every order. The class is normally held in stock.
Request a sample for your own efficiency testing.