Solar & Energy Storage
Solar inverters and battery energy-storage converters built on Navitas SiC MOSFETs and SiC diodes for high-frequency, high-efficiency conversion.
Explore solutionAll devices are sourced through Navitas GeneSiC's authorized channel and backed by certificates of origin and RoHS compliance documents.
Mainstream SiC MOSFET and diode types are held in regional warehouses, cutting lead times for production lines.
Our FAE team helps you compare on-resistance and current, verify SiC gate drive and plan the thermal design.
Import declarations, certificates of origin and RoHS documents accompany every shipment for smooth customs clearance.
EXW, DAP and door-to-door delivery options with tracked shipping to more than 40 countries worldwide.
GeneSiC 1200 V SiC MOSFETs from 25 mOhm in TO-263-7, AEC-Q101 qualified, for chargers, solar inverters, storage and DC-DC.
2 product seriesGeneSiC SiC Schottky MPS diodes from 10 A to 100 A at 1200 V with zero reverse recovery, for PFC, rectification and freewheeling.
2 product seriesSolar inverters and battery energy-storage converters built on Navitas SiC MOSFETs and SiC diodes for high-frequency, high-efficiency conversion.
Explore solutionOn-board chargers, DC-DC converters and charging stations built on Navitas 1200 V SiC MOSFETs and diodes for power density and efficiency.
Explore solutionSwitch-mode supplies, UPS stages and active PFC front ends built on Navitas SiC MOSFETs and Schottky diodes for low-loss conversion.
Explore solutionCompare Navitas GeneSiC SiC MOSFETs and Schottky MPS diodes by voltage class, current and on-resistance to choose the right device for your design.
Gate-drive and layout guidance for designing high-frequency converters around Navitas GeneSiC 1200 V SiC MOSFETs, including loop inductance and EMI control.
A hands-on review of Navitas GeneSiC 1200 V SiC MOSFETs for chargers, solar and storage, covering on-resistance stability, switching and package practice.
New stocking programs add Navitas GeneSiC SiC MOSFETs and Schottky MPS diodes to regional warehouses, improving lead times for charger and inverter makers.
BeiLuo's new verification bench lets FAE engineers characterize gate drive, switching loss and thermal behavior for Navitas GeneSiC SiC MOSFETs and diodes.
How 1200 V SiC MOSFETs and zero-recovery Schottky diodes are reshaping charger, solar and storage efficiency and power density through 2026.
Tell us your target SiC MOSFET or diode, quantity and application. Our team responds within 24 hours with pricing, stock status and technical recommendations.
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