How do I start selecting a Navitas SiC device?

Fix the voltage class from your DC bus, size the current for the worst-case load, then choose between a SiC MOSFET and a SiC Schottky diode for each position in the circuit. Finally pick the on-resistance or forward current and the package for your board. Those decisions narrow the catalog quickly.

SiC MOSFET or SiC diode: which do I need where?

Use a SiC MOSFET for the active switch in a converter, and a SiC Schottky diode for rectification, freewheeling and power-factor correction. In a boost PFC stage, for example, the MOSFET is the switch and the diode is the rectifier. Many designs use both, matched to the same voltage class.

Can BeiLuo help finalize my device choice?

Yes. Send your voltage, current, switching frequency and topology and we will propose a shortlist with loss, thermal resistance and stock status, then support design-in. Getting the device right saves project time.

What selection mistakes should I avoid?

The usual mistakes are sizing cooling from the 25 C on-resistance, ignoring the gate-loop layout and choosing a package that does not fit the PCB. Each adds cost or risk without benefit. Validate the choice on the bench before committing the BOM.

What gate drive does a Navitas SiC MOSFET need?

The G3F family works with a standard +15 V / -5 V gate drive, so it is compatible with common gate drivers. The negative off-state supply improves robustness at high dv/dt and helps prevent false turn-on in a bridge. Keep the gate loop short and choose the gate resistor for your EMI target.

Why does loop inductance matter so much with SiC?

SiC switches fast, so the same parasitic inductance that a silicon design tolerates produces much higher overshoot and ringing. The gate loop and the power commutation loop are the two critical paths, and both must be kept short. A tight layout is the single biggest lever on overshoot and EMI.

How do I tune the gate resistor?

Start from the datasheet value, then increase the resistor in small steps until ringing and overshoot fall within your limits, and decrease it if switching loss is too high. Measure at the device terminals, not at the bus. Our FAE team can review your gate-drive design.

How do I handle the body diode?

The SiC MOSFET body diode has a low forward voltage and a low reverse-recovery charge, so it freewheels cleanly. For heavy freewheeling duty, a parallel SiC Schottky diode reduces loss further. Match the diode current to the freewheeling current.

My SiC diode fails at start-up. Where do I start?

Check the inrush and surge current against the diode's surge rating, then check the thermal path and the layout. A start-up failure is often a surge or a cold-solder or thermal-interface problem rather than a steady-state overload. Measure the surge current with a clamped probe during start-up.

Why is my diode running hot?

Forward conduction loss scales with the forward voltage times current, and the thermal path must remove it. Check the current, the forward voltage at temperature and the interface and heatsink. A thick or uneven interface is a frequent culprit. Use a thin, uniform interface and verify case temperature under load.

How do I parallel SiC diodes correctly?

The MPS diode has a positive temperature coefficient of forward voltage, so current sharing improves as one diode heats, which makes paralleling practical. Match the diodes, keep the layout symmetric so the inductances are equal, and verify sharing under load. Our FAE team can review your paralleling design.

Do I still need a snubber with a SiC diode?

A SiC Schottky diode has no reverse-recovery charge, so it produces far less recovery noise than a silicon fast-recovery diode, and often no snubber is needed. Where ringing remains, it usually comes from the layout, so tighten the loop before adding a snubber. Layout is the first lever on EMI.

What is the standout feature of the Navitas GeneSiC G3F MOSFET?

The G3F family has the most stable on-resistance over temperature of the GeneSiC generations, so the thermal design is predictable from the hot value. Combined with a low gate-drain charge and a robust body diode, it makes a high-frequency design straightforward. The main design care point is the gate and commutation loop.

How does the G3F compare with the G3R family?

The G3F (Fast) family is optimized for fast switching speed and power density, which suits high-frequency chargers, solar and storage. The G3R family offers very low on-resistance for applications where conduction loss dominates. The right choice depends on your frequency and current. Our FAE team can compare them at your operating point.

Does the TO-263-7 package help?

Yes. The TO-263-7 surface-mount package provides a Kelvin source connection that removes source inductance from the gate loop, which tames the ringing that fast SiC switching would otherwise cause. It also supports a compact PCB layout with good thermal spreading. It is one reason the G3F is straightforward to design in.

Can I get samples to evaluate?

Yes. We provide samples of the 1200 V SiC MOSFETs for your own efficiency and thermal testing, with documentation included and FAE support during bring-up. Request a sample and we will confirm stock and lead time.

Technical Support | Navitas Expertise | BeiLuo

Guides, application notes, troubleshooting articles and reviews from BeiLuo's FAE team covering Navitas GeneSiC SiC MOSFETs and SiC Schottky MPS diodes.

Guides 1 Application Notes 1 Troubleshooting 1 Reviews 1

How to Select a Navitas SiC MOSFET or Schottky Diode

2026-07-26 - Guides - By Wei Zhang

Compare Navitas GeneSiC SiC MOSFETs and Schottky MPS diodes by voltage class, current, on-resistance and package to choose the right device for your design.

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Navitas SiC MOSFET Application Notes: Gate Drive and Layout

2026-07-19 - Application Notes - By Wei Zhang

Gate-drive, loop-inductance and thermal guidance for designing high-frequency converters around Navitas GeneSiC 1200 V SiC MOSFETs with clean switching.

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Troubleshooting Navitas SiC Diodes in High-Frequency Converters

2026-07-09 - Troubleshooting - By Li Chen

A systematic method for diagnosing surge events, thermal issues and paralleling problems in Navitas GeneSiC SiC Schottky diodes inside high-frequency converters.

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Navitas GeneSiC 1200 V SiC MOSFETs: A Practical Review

2026-06-30 - Reviews - By Hao Wang

A hands-on review of Navitas GeneSiC 1200 V SiC MOSFETs for chargers, solar and storage, covering on-resistance stability, switching and package practice.

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Meet Our FAE Team

Wei Zhang

Senior FAE Engineer, Wide-Bandgap

SiC MOSFETSiC DiodeGate Drive

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Li Chen

FAE Engineer, SiC Rectifiers

SiC DiodePFCEMC

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Hao Wang

FAE Engineer, Applications

SiC MOSFETEfficiencyThermal

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