G3F25MT12J

The G3F25MT12J is a 1200 V / 87 A Navitas GeneSiC silicon carbide MOSFET with a typical on-resistance of 25 milliohm, in the surface-mount TO-263-7 package. It uses the GeneSiC Gen3F trench-assisted planar technology, which delivers the most stable on-resistance over temperature of any generation, so the thermal design is predictable from the hot value. Silicon carbide has no tail current and switches far faster than silicon with lower switching loss, so a converter can run at a higher frequency with smaller magnetics and a smaller cooling system, which raises power density in on-board chargers, EV charging, solar inverters, energy storage and high-voltage DC-DC converters. The device is AEC-Q101 qualified and rated to a 175 C maximum junction temperature, and its balanced capacitances, low gate-drain charge and robust body diode with low reverse-recovery charge ease the gate-drive and freewheeling design. The TO-263-7 package keeps the gate loop tight. Every device is factory-traceable and ships with import declaration, certificate of origin and RoHS documentation. Designers should confirm the gate drive, loop inductance and hot on-resistance for the thermal design. BeiLuo holds this class in stock and our FAE team supports gate drive, layout and thermal validation.